Ask for availability. The Mitsubishi CM75DY-24H is a high-power insulated gate bipolar transistor (IGBT) module designed for efficient switching applications. This module features a half-bridge configuration with two IGBT transistors, each equipped with a reverse-connected super-fast recovery free-wheel diode, ensuring rapid switching and reliable performance. The isolated baseplate design facilitates straightforward system assembly and effective thermal management. Key specifications include a collector-emitter voltage (VCE) of 1200 V, a collector current (IC) of 75 A, and a power rating of 600 W. Operating temperature ranges from -40°C to +150°C, making it suitable for diverse industrial environments. Applications encompass AC motor control, motion/servo control, uninterruptible power supplies (UPS), and welding power supplies. For detailed technical information, refer to the datasheet provided by Mitsubishi Electric Semiconductor.