Ask for availability. The Mitsubishi CM75TU-24F is a high-power insulated gate bipolar transistor (IGBT) module designed for demanding switching applications. This module features a collector-emitter voltage (VCES) rating of 1200V and a continuous collector current (IC) of 75A, making it suitable for general-purpose inverters and servo controls. The module comprises six IGBT elements in a single package, offering a compact and efficient solution for power conversion needs. Its insulated type design ensures safe and reliable operation in various industrial environments. Key specifications include a maximum collector-emitter saturation voltage (VCE(sat)) of 2.4V at 15V gate-emitter voltage (VGE) and 75A collector current, and an input capacitance (Cies) of 29nF at 10V. The module operates within a temperature range of -40°C to 150°C, providing versatility across different applications. For detailed information, refer to the datasheet from Mitsubishi Electric Semiconductor.